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| Philips Semiconductors Product specification Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integreated circuits and other low power gate trigger circuits. 2N5064 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. UNIT 200 0.5 0.8 10 V A A A PINNING - TO92 variant PIN 1 2 3 DESCRIPTION anode gate cathode PIN CONFIGURATION SYMBOL a k 321 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave Tc 67 C Tc 102 C all conduction angles half sine wave; Ta = 25 C prior to surge; t = 8.3 ms t = 8.3 ms Ta = 25C, tp = 300s; f = 120 Hz Ta = 25C Ta = 25C, over any 16 ms period -65 -65 MAX. 200 0.51 0.255 0.8 8 10 0.4 1 5 5 0.1 0.01 150 125 UNIT V A A A A A A2s A V V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) Average on-state current IT(RMS) ITRM ITSM I2t IGM VGM VRGM PGM PG(AV) Tstg Tj RMS on-state current Repetitive peak on-state current Non-repetitive peak on-state current I2t for fusing Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature October 1997 1 Rev 1.200 Philips Semiconductors Product specification Thyristor sensitive gate THERMAL RESISTANCES SYMBOL Rth j-c Rth j-a PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient CONDITIONS see note: 1 2N5064 MIN. - TYP. 200 MAX. 75 - UNIT K/W K/W STATIC CHARACTERISTICS Tc = 25 C, RGK = 1 k unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS Tc = 25 C Tc = -65 C VD = VDRM(max); RL = 100 ; gate open circuit VD = 12 V; RGK = 1 k VD = 12 V; RGK = 1 k IT = 1.2 A peak; tp = 300 s; 0.01 Tj = 25 C Tj = -65 C Tj = 125 C VD = VDRM(max); RL = 100 ; gate open circuit VD = VDRM(max); VR = VRRM(max) Tj = 25 C Tj = 125 C MIN. 0.1 TYP. MAX. 200 350 6 5 1.7 0.8 1.2 UNIT A A mA mA V V V V IL IH VT VGT Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current - - 10 50 A A DYNAMIC CHARACTERISTICS Tc = 25 C, RGK = 1 k unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s VDM = 67% VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK = 1 k MIN. TYP. 25 2 100 MAX. UNIT V/s s s 1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of a metal clamp over the curved surface. October 1997 2 Rev 1.200 Philips Semiconductors Product specification Thyristor sensitive gate MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g 2N5064 2.54 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 2.5 max 12.7 min 321 Notes 1. Epoxy meets UL94 V0 at 1/8". 0.48 0.40 0.40 min Fig.1. TO92; plastic envelope. October 1997 3 Rev 1.200 Philips Semiconductors Product specification Thyristor sensitive gate DEFINITIONS Data sheet status Objective specification Product specification Limiting values 2N5064 This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 4 Rev 1.200 |
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